With DDR4 DRAM set to hit the market in 2013, two manufactures took the opportunity at this years International Solid-State Circuits Conference (ISSCC) to demonstrate their DDR4 DRAM. It is expected that DDR4 will represent 50 percent of the market by mid-2015, after its initial launch on the server side in 2013.
DDR4 is set to have a data transfer rates of 2133 MT/s to 4266 MT/s compared to 800 MT/s to 2133 MT/s of DDR3. DDR4 is also expected to have significantly lower voltage requirements than DDR3. It will require between 1.05 V to 1.2 V to operate, whereas DDR3 requires between 1.2 V to 1.5 V. The lower voltage requirement is expected to reduces power consumption by 40 percent compared to a 1.5 V DDR3 module. DDR4 will not be pin compatible with DDR3, which means they will not be backwards compatible.
Samsung's DDR4 DRAM module can achieve data transfer rates of 2133 Gb/s at 1.2V, compared to 1.35V and 1.5V DDR3 DRAM at an equivalent 30nm-class process technology, with speeds of up to 1.6 Gb/s. Hynix's DDR4 device works at 2400MHz (2400 Mb/s) at 1.2V and processes up to 19.2 GB/s of data per second with a 64-bit I/O. Hynix used its 38nm manufacturing process technology, while Samsung employed the 30nm node instead.
Source: Toms Hardware